A 970 nm strained-layer InGaAs/GaAlAs quantum well laser for pumping an
erbium-doped optical fiber amplifier
Ming C. Wu; Olsson, N.A.; Sivco, D.; Cho, A.Y.
AT&T Bell Labs., Murray Hill, NJ, USA
Applied Physics Letters
, vol.56, no.3
, Page: 221-3
, 15 Jan. 1990
Language: English
Abstract: The authors report the performance of a 970 nm
strained-layer InGaAs/GaAlAs quantum well laser and its application for pumping
Er-doped optical fiberamplifiers. The laser was grown by molecular beam epitaxy
and has three In/sub 0.2/Ga/sub 0.8/As/GaAs quantum wells. For a 5- mu m-wide
and 400- mu m-long ridge-waveguide laser, a CW threshold current of 20 mA and an
external quantum efficiency of 0.28 mW/mA per facet were obtained. Maximum
output power exceeds 32 mW/facet. With antireflection coating, even higher
external quantum efficiency (0.40 mW/mA) was achieved, and more than 20 mW of
power was coupled into a single mode fiber. Preliminary experiments of pumping
the Er-doped fiber amplifier gave 15 dB of gain at 1.555 mu m for a pump power
of 14 mW into the Er fiber. (18 References)
Subjects: erbium fibre optics gallium compounds gradient index optics
indium compounds optical fibres optical pumping optical wave guides
semiconductor junctionlasers solid lasers Experimental GRIN-SCH lasers
trained-layer quantum well laser pumping optical fiber amplifier Er-doped
optical fiber molecular beam epitaxy ridge-waveguide laser CW threshold current
external quantum efficiency output power antireflection coating single mode
fiber gain 970 nm 1.555 micron 5 micron 14 mW 400 micron 20 mA In/sub 0.2/Ga/sub
0.8/As-GaAsInGaAs-GaAlAs Design of specific laser systems Lasing action in
semiconductors with junctions Optical waveguides and couplers Other optical
properties Lasing action in other solids Semiconductor junction lasers Fibre
optics Optical waveguides Solid lasers INSPEC © 2001 Institution of
Electrical Engineers. All rights reserved. Dialog® File
Number 2 Accession Number 3603153 |